P321 N-Channel Enhancement MOSFET 16A 60V
Type Designator: SGSP321
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 75 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 16 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 45 nS
Drain-Source Capacitance (Cd): 350 pF
Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm
Package: TO220
Üye Girişi
Sepetim
0222 246 09 12
info@esgrupelektronik.com
05448712919
