GD170B PNP Transistor TO-66
Type Designator: GD170B
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 5.3 W
Maximum Collector-Base Voltage |Vcb|: 33 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 90 °C
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO-66
Üye Girişi
Sepetim
0222 246 09 12
info@esgrupelektronik.com
05448712919
